Optical Properties of Semiconductor Quantum Dots. Ulrike Woggon

Optical Properties of Semiconductor Quantum Dots


Optical.Properties.of.Semiconductor.Quantum.Dots.pdf
ISBN: 3540609067,9783540609063 | 254 pages | 7 Mb


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Optical Properties of Semiconductor Quantum Dots Ulrike Woggon
Publisher: Springer




In the JQI experiment the The camera qualities, the optical properties of the dot, the careful positioning of the dot, and the shape and purity of the nanowire combine to provide an image of the electric field intensity of the nanowire with 12-nm accuracy. This thesis investigates the transport and optical properties of the single-electron transistor (SET), with an extra quantum dot joining the SET system. Tue Jun 18 A promising line of research involves combining the OLEDs with inorganic quantum dots, tiny semiconductor crystals that emit different colors of light depending on their size. The optically excited main dot in the The thesis is organized as follows:The first chapter gives a brief introduction to the semiconductor quantum dots, where the concept of quantum dots, the more detailed description of some unique quantum effects of the quantum dots has been presented. On Metrology and Properties of Engineering Surfaces: Taipei, Taiwan. Tags: LEDs, optics, quantum dots. III-V semiconductors are made of atoms from column III (B, Al, Ga, In, Tl) and column V (N, As, P, Sb, Bi) of the periodic table, and constitute a particularly rich variety of compounds with many useful optical and electronic properties. In the infrared, III-V compounds using phosphorus, arsenic, or antimony from column V with indium, gallium, aluminum, or thallium from column III can create lasers and detectors based on quantum-dot (QD) or type-II superlattice (T2SL). Quantum dots, nanometer-sized semiconductor balls, are tailored to possess a specified set of allowed energy states; in effect the dots are artificial atoms that can be moved around. Researchers at the University of California, Los Angeles, have come up a with a new and simple way to control the optical properties of buried indium arsenide (InAs) quantum dots by inserting gallium arsenide antimonide (GaAs(Sb)) cladding layers above and “This semiconductor nanostructure could be ideal for making intermediate-band solar cells (IBSCs) because it is highly efficient at converting solar energy into electricity, according to theoretical calculations. Nanotechnology news - Bringing cheaper, 'greener' lighting to market with inkjet-printed hybrid quantum dot LEDs.